N-Channel Mosfet
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This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 0.45 A |
| PD @TA = +25°C (W) | 0.35 W |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 990 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 1200 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 1800 mΩ |
| |VGS(TH)| Min (V) | 0.4 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.5 nC |
| CISS Typ (pF) | 28 pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2582 | 2022-05-17 | 2022-08-17 | Qualified Additional Bill of Material (BOM) – Lead Frame Raw Material (C19400 XSH) |
