N-Channel MOSFET
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This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
N+N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
20 V |
|VGS| (±V) |
8 ±V |
|IDS| @TA = +25°C (A) |
0.45 A |
PD @TA = +25°C (W) |
0.35 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
990 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
1200 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
1800 mΩ |
|VGS(TH)| Min (V) |
0.4 V |
|VGS(TH)| Max (V) |
1 V |
QG Typ @ |VGS| = 4.5V (nC) |
0.5 nC |
CISS Typ (pF) |
28 pF |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2582 | 2022-05-17 | 2022-08-17 | Qualified Additional Bill of Material (BOM) – Lead Frame Raw Material (C19400 XSH) |
