Diodes Incorporated
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DMN26D0UDJ (Not Recommended for new design)

NRND = Not Recommended for New Design

N-Channel Mosfet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Product Specifications

    Product Parameters

    Compliance (Only Automotive supports PPAP) On Request
    CISS Typ (pF) 14.5
    Compliance (Only Automotive(Q) supports PPAP) Standard
    ESD Diodes (Y|N) Yes
    |IDS| @TA = +25°C (A) 0.24
    PD @TA = +25°C (W) 0.3
    Polarity N+N
    AEC Qualified Yes
    RDS(ON)Max@ VGS(1.8V)(mΩ) 6000
    RDS(ON)Max@ VGS(2.5V)(mΩ) 4000
    RDS(ON)Max@ VGS(4.5V)(mΩ) 3000
    |VDS| (V) 20
    |VGS| (±V) 10
    |VGS(TH)| Max (V) 1.05
    |VGS(TH)| Min (V) 0.45

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2582 2022-05-17 2022-08-17 Qualified Additional Bill of Material (BOM) – Lead Frame Raw Material (C19400 XSH)
    PCN-2561 2022-02-17 2022-08-17 Device End of Life (EOL)