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DMN2500UFB4 (Not Recommended for new design)

NRND = Not Recommended for New Design

N-Channel Mosfet

Datasheet

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Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimize the onstate resistance (R_DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

DC-DC Converters

Power management functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	On Request
C_ISS Condition @\|V_DS\| (V)	N/A
C_ISS Typ (pF)	62
ESD Diodes (Y\|N)	Yes
\|I_DS\| @T_A = +25°C (A)	0.81
P_D @T_A = +25°C (W)	N/A
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	N/A
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.74
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	700
R_DS(ON)Max@ V_GS(10V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	500
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	N/A
\|V_DS\| (V)	20
\|V_GS\| (±V)	6
\|V_GS(TH)\| Max (V)	1
\|V_GS(TH)\| Min (V)	0.5

Technical Documents

SPICE Model

DMN2500UFB4.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2389	2019-02-05	2019-08-05	Device End of Life
PCN-2299	2018-03-01	2018-06-01	Additional Qualified (A/T) Assembly Test Site