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DMN2500UFB4 (NRND)

NRND = Not Recommended for New Design

N-Channel Mosfet

Datasheet

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Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimize the onstate resistance (R_DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

DC-DC Converters

Power management functions

Specifications & Technical Documents

Product Parameters

C_ISS Condition @\|V_DS\| (V)	N/A
C_ISS Typ (pF)	62
ESD Diodes (Y\|N)	Yes
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	N/A
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.74
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	700
R_DS(ON)Max@ V_GS(10V) (mΩ)	N/A
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	500
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	N/A
\|V_DS\| (V)	20
\|V_GS\| (±V)	6
\|V_GS(TH)\| Max (V)	1
\|V_GS(TH)\| Min (V)	0.5

Technical Documents

SPICE Model

DMN2500UFB4.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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