Diodes Incorporated
SOT23

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DMN24H11DSQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed 
  • Small Surface Mount Package

Application(s)

  • DC-DC Converters
  • Power management functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 240 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.27 A
PD @TA = +25°C (W) 1.2 W
RDS(ON)Max@ VGS(10V)(mΩ) 11000 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 12000 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 10V (nC) 3.7 nC
CISS Typ (pF) 76.8 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC