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DMN24H11DS

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) On Request
Polarity N
ESD Diodes (Y|N) No
VDS (V) 240 V
VGS (±V) 20 ±V
IDS @TA = +25°C (A) 0.27 A
PD @TA = +25°C (W) 1.2 W
RDS(ON)Max @ VGS(10V)(mΩ) 11000 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 12000 mΩ
VGS (th) Max (V) 3 V
QG Typ@ VGS = 10V(nC) 3.7 nC

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products