Diodes Incorporated
SOT23

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DMN24H11DS

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 240 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 0.27 A
PD @TA = +25°C (W) 1.2 W
RDS(ON)Max@ VGS(10V)(mΩ) 11000 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 12000 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 10V (nC) 3.7 nC
CISS Typ (pF) 76.8 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf