N-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
| Compliance (Only Automotive Supports PPAP) | Automotive |
|---|---|
| AEC Qualified | Yes |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 12 ±V |
| |IDS| @TA = +25°C (A) | 1.1 A |
| PD @TA = +25°C (W) | 1.1 W |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 600 mΩ |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | 800 mΩ |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | 1000 mΩ |
| |VGS(TH)| Min (V) | 0.45 V |
| |VGS(TH)| Max (V) | 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.7 nC |
| CISS Typ (pF) | 52 pF |
| CISS Condition @|VDS| (V) | 16 V |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
