Diodes Incorporated — Analog and discrete power solutions
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DMN2451UFDQ

N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Very low Gate Threshold Voltage, 1.0V Max.
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • The DMN2451UFDQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Load Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Automotive
AEC Qualified Yes
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 1.1 A
PD @TA = +25°C (W) 1.1 W
RDS(ON)Max@ VGS(4.5V)  (mΩ) 600 mΩ
RDS(ON)Max@ VGS(2.5V)  (mΩ) 800 mΩ
RDS(ON)Max@ VGS(1.8V)  (mΩ) 1000 mΩ
|VGS(TH)| Min (V) 0.45 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.7 nC
CISS Typ (pF) 52 pF
CISS Condition @|VDS| (V) 16 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity