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DMN2451UFB4Q

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Footprint of just 0.6mm2 – Thirteen Times Smaller than SOT23
0.4mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
The DMN2451UFB4Q is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
https://www.diodes.com/quality/product-definitions/

Application(s)

Load Switch

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	1.3 A
P_D @T_A = +25°C (W)	1.1 W
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	400 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	500 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	700 mΩ
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	3.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	6.4 nC

Technical Documents

SPICE Model

DMN2451UFB4Q.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile