Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMN2450UFD

N-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Very Low Gate Threshold Voltage, 1.0V Max
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Load Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified No
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 0.9 A
PD @TA = +25°C (W) 0.89 W
RDS(ON)Max@ VGS(4.5V)  (mΩ) 600 mΩ
RDS(ON)Max@ VGS(2.5V)  (mΩ) 800 mΩ
RDS(ON)Max@ VGS(1.8V)  (mΩ) 1000 mΩ
|VGS(TH)| Min (V) 0.45 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.7 nC
CISS Typ (pF) 52 pF
CISS Condition @|VDS| (V) 16 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Purchase & Availablity