Diodes Incorporated — Analog and discrete power solutions
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DMN2400UFD (NRND)

NRND = Not Recommended for New Design

N-Channel Mosfet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Load switch

Specifications & Technical Documents

Product Parameters

CISS Condition @|VDS| (V) N/A
CISS Typ (pF) 38
ESD Diodes (Y|N) Yes
Polarity N
QG Typ @ |VGS| = 10V (nC) N/A
QG Typ @ |VGS| = 4.5V (nC) 0.5
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)  (mΩ) 1000
RDS(ON)Max@ VGS(10V)  (mΩ) N/A
RDS(ON)Max@ VGS(2.5V)  (mΩ) 800
RDS(ON)Max@ VGS(4.5V)  (mΩ) 600
|VDS| (V) 20
|VGS| (±V) N/A
|VGS(TH)| Max (V) 1
|VGS(TH)| Min (V) 0.45

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

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