Diodes Incorporated
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DMN2400UFD (Not Recommended for new design)

NRND = Not Recommended for New Design

N-Channel Mosfet

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Load switch

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) DMN2400UFDQ
CISS Condition @|VDS| (V) N/A
CISS Typ (pF) 38
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 0.9
PD @TA = +25°C (W) 0.8
Polarity N
QG Typ @ |VGS| = 10V (nC) N/A
QG Typ @ |VGS| = 4.5V (nC) 0.5
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 1000
RDS(ON)Max@ VGS(10V)(mΩ) N/A
RDS(ON)Max@ VGS(2.5V)(mΩ) 800
RDS(ON)Max@ VGS(4.5V)(mΩ) 600
|VDS| (V) 20
|VGS| (±V) N/A
|VGS(TH)| Max (V) 1
|VGS(TH)| Min (V) 0.45

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2389 2019-02-05 2019-08-05 Device End of Life
PCN-2340 2018-04-26 2018-05-26 Qualification of Alternate Wafer Sources for Select MOSFET Products