NRND = Not Recommended for New Design
N-Channel Mosfet
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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| CISS Condition @|VDS| (V) | N/A |
|---|---|
| CISS Typ (pF) | 38 |
| ESD Diodes (Y|N) | Yes |
| Polarity | N |
| QG Typ @ |VGS| = 10V (nC) | N/A |
| QG Typ @ |VGS| = 4.5V (nC) | 0.5 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | 1000 |
| RDS(ON)Max@ VGS(10V) (mΩ) | N/A |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | 800 |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 600 |
| |VDS| (V) | 20 |
| |VGS| (±V) | N/A |
| |VGS(TH)| Max (V) | 1 |
| |VGS(TH)| Min (V) | 0.45 |
