Diodes Incorporated — Analog and discrete power solutions
X2 DFN1006 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3

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DMN2320UFB4

N-Channel MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.

Application(s)

  • Load switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Standard
AEC Qualified No
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 1 A
PD @TA = +25°C (W) 1.07 W
RDS(ON)Max@ VGS(4.5V)  (mΩ) 320 mΩ
RDS(ON)Max@ VGS(2.5V)  (mΩ) 500 mΩ
RDS(ON)Max@ VGS(1.8V)  (mΩ) 1000 mΩ
|VGS(TH)| Max (V) 0.95 V
QG Typ @ |VGS| = 4.5V (nC) 0.89 nC
CISS Typ (pF) 71 pF

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

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