Diodes Incorporated
X2 DFN1006 3

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X2-DFN1006-3.png
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DMN2320UFB4

N-Channel Mosfet

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Description

This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.

Application(s)

  • Load switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 1 A
PD @TA = +25°C (W) 1.07 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 320 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 500 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 1000 mΩ
|VGS(TH)| Max (V) 0.95 V
QG Typ @ |VGS| = 4.5V (nC) 0.89 nC
CISS Typ (pF) 71 pF

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2299 2018-03-01 2018-06-01 Additional Qualified (A/T) Assembly Test Site

FAQs

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