Diodes Incorporated
X2 DFN1310 6

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

X2-DFN1310-6.png
Back to MOSFET Master Table

DMN2300UFL4Q

20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and is supported by a PPAP.

Feature(s)

  • Footprint of Just 1.3mm2
  • Ultra Low Profile Package — 0.4mm Profile
  • On Resistance <200mΩ
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • Ultra-Small Surface Mount Package
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The DMN2300UFL4Q is suitable for automotive applications
    requiring specific change control and is AEC-Q101 qualified,
    is PPAP capable, and is manufactured in IATF16949:2016
    certified facilities.

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 2.11 A
PD @TA = +25°C (W) 1.39 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 195 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 260 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 380 mΩ
|VGS(TH)| Max (V) 0.95 V
QG Typ @ |VGS| = 4.5V (nC) 1.6 nC
CISS Typ (pF) 67.6 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC