Diodes Incorporated — Analog and discrete power solutions
X2 DFN1310 6

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1310-6

X2 DFN1310 6

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1310-6

X2 DFN1310 6

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1310-6

Back to DMN2300UFL4Q

DMN2300UFL4Q

20V Dual N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101 and is supported by a PPAP.

Feature(s)

  • Footprint of Just 1.3mm2
  • Ultra Low Profile Package — 0.4mm Profile
  • On Resistance <200mΩ
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • Ultra-Small Surface Mount Package
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • The DMN2300UFL4Q is suitable for automotive applications
    requiring specific change control and is AEC-Q101 qualified,
    is PPAP capable, and is manufactured in IATF16949:2016
    certified facilities.

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Polarity

N+N

ESD Diodes (Y|N)

Yes

|VDS| (V)

20 V

|VGS| (±V)

8 ±V

|IDS| @TA = +25°C (A)

2.11 A

PD @TA = +25°C (W)

1.39 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

195 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

260 mΩ

RDS(ON)Max@ VGS(1.8V)  (mΩ)

380 mΩ

|VGS(TH)| Max (V)

0.95 V

QG Typ @ |VGS| = 4.5V (nC)

1.6 nC

CISS Typ (pF)

67.6 pF

CISS Condition @|VDS| (V)

20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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