N-Channel MOSFET
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This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
Yes |
Polarity |
N+N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
20 V |
|VGS| (±V) |
8 ±V |
|IDS| @TA = +25°C (A) |
2.11 A |
PD @TA = +25°C (W) |
1.39 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
195 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
260 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
380 mΩ |
|VGS(TH)| Min (V) |
0.45 V |
|VGS(TH)| Max (V) |
0.95 V |
QG Typ @ |VGS| = 4.5V (nC) |
1.6 nC |
CISS Typ (pF) |
70 pF |
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