Diodes Incorporated — Analog and discrete power solutions
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DMN2300UFD

N-Channel MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Load switch
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP) Standard
    AEC Qualified Yes
    Polarity N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 8 ±V
    |IDS| @TA = +25°C (A) 1.7 A
    PD @TA = +25°C (W) 0.96 W
    RDS(ON)Max@ VGS(4.5V)  (mΩ) 200 mΩ
    RDS(ON)Max@ VGS(2.5V)  (mΩ) 260 mΩ
    RDS(ON)Max@ VGS(1.8V)  (mΩ) 400 mΩ
    |VGS(TH)| Min (V) 0.45 V
    |VGS(TH)| Max (V) 0.95 V
    QG Typ @ |VGS| = 4.5V (nC) 0.89 nC
    CISS Typ (pF) 70 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availablity