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DMN2250UFB

N-Channel MOSFET

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Description

This new generation 20V N channel enhancement mode MOSFET and Low profile has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP)

    Standard

    AEC Qualified

    Yes

    Polarity

    N

    ESD Diodes (Y|N)

    Yes

    |VDS| (V)

    20 V

    |VGS| (±V)

    8 ±V

    |IDS| @TA = +25°C (A)

    1.35 A

    PD @TA = +25°C (W)

    0.5 W

    RDS(ON)Max@ VGS(4.5V)  (mΩ)

    170 mΩ

    RDS(ON)Max@ VGS(2.5V)  (mΩ)

    230 mΩ

    RDS(ON)Max@ VGS(1.8V)  (mΩ)

    250 mΩ

    |VGS(TH)| Min (V)

    0.35 V

    |VGS(TH)| Max (V)

    1 V

    QG Typ @ |VGS| = 4.5V (nC)

    1.4 nC

    QG Typ @ |VGS| = 10V (nC)

    3.1 nC

    CISS Typ (pF)

    100 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availability

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    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products