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DMN2120UFCL

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Typical Off Board Profile of 0.6mm - Ideally Suited for Thin Applications
Low RDS(ON) – Minimizes Conduction Losses
PCB Footprint of 2.56mm2
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

Power Management Functions
Load Switch

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	1.8 A
P_D @T_A = +25°C (W)	1.16 W
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	100 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	140 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	200 mΩ
\|V_GS(TH)\| Min (V)	0.3 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	1.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	2.8 nC
C_ISS Typ (pF)	130 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMN2120UFCL.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products