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DMN2120UFCL

20V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Typical Off Board Profile of 0.6mm - Ideally Suited for Thin Applications
  • Low RDS(ON) – Minimizes Conduction Losses
  • PCB Footprint of 2.56mm2
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Power Management Functions
  • Load Switch

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Polarity

N

ESD Diodes (Y|N)

Yes

|VDS| (V)

20 V

|VGS| (±V)

12 ±V

|IDS| @TA = +25°C (A)

1.8 A

PD @TA = +25°C (W)

1.16 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

100 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

140 mΩ

RDS(ON)Max@ VGS(1.8V)  (mΩ)

200 mΩ

|VGS(TH)| Min (V)

0.3 V

|VGS(TH)| Max (V)

1 V

QG Typ @ |VGS| = 4.5V (nC)

1.4 nC

QG Typ @ |VGS| = 10V (nC)

2.8 nC

CISS Typ (pF)

130 pF

CISS Condition @|VDS| (V)

10 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products