Diodes Incorporated — Analog and discrete power solutions
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DMN2058UW

N-CHANNEL ENHANCEMENT MODE MOSFET

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Specifications & Technical Documents

Product Parameters

AEC Qualified No
Compliance (Only Automotive Supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 3.5
PD @TA = +25°C (W) 0.7
RDS(ON)Max@ VGS(10V)(mΩ) 42 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 45 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 60 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 91 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1.2 V
QG Typ @ |VGS| = 4.5V (nC) 3.6 nC
QG Typ @ |VGS| = 10V (nC) 7.7 nC
CISS Typ (pF) 281 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2601 2022-10-28 2023-01-28 Additional Wafer Source for Select Discrete Products