Diodes Incorporated
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DMN2053UW

20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • DC-DC Converters
  • Analog Switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 2.9
PD @TA = +25°C (W) 0.7
RDS(ON)Max@ VGS(4.5V)(mΩ) 56 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 65 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 93 mΩ
|VGS(TH)| Min (V) 0.35 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 3.6 nC
CISS Typ (pF) 369 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC