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DMN2050LQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use.

Feature(s)

  • Low On-Resistance
  • 29m @VGS = 4.5V
  • 50m @VGS = 2.5V
  • 100m @VGS = 2.0V
  • Very Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No Y/N
VDS (V) 20 V
VGS (±V) 12 ±V
IDS @TA = +25°C (A) 5.9 A
PD @TA = +25°C (W) 1.4 W
RDS(ON)Max @ VGS(4.5V)(mΩ) 29 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 50 mΩ
VGS(th) Min. (V) 0.45 V
VGS (th) Max (V) 1.4 V
CISS Typ (pF) 532 pF
CISS Condition [@VDS] (V) 10 V
QG Typ@ VGS = 10V(nC) 6.7 nC

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Technical Documents

SPICE Model

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TN1.pdf

RoHS CofC

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