Diodes Incorporated
SOT23

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DMN2050LQ

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use.

Feature(s)

  • Low On-Resistance
  • 29m @VGS = 4.5V
  • 50m @VGS = 2.5V
  • 100m @VGS = 2.0V
  • Very Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 5.9 A
PD @TA = +25°C (W) 1.4 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 29 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 50 mΩ
|VGS(TH)| Min (V) 0.45 V
|VGS(TH)| Max (V) 1.4 V
QG Typ @ |VGS| = 10V (nC) 6.7 nC
CISS Typ (pF) 532 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC