Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type B)
Dual N-Channel Enhancement Mode MOSFET
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This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
N+N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
20 V |
|VGS| (±V) |
12 ±V |
|IDS| @TA = +25°C (A) |
4.5 A |
PD @TA = +25°C (W) |
1.42 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
45 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
55 mΩ |
|VGS(TH)| Min (V) |
0.4 V |
|VGS(TH)| Max (V) |
1 V |
QG Typ @ |VGS| = 4.5V (nC) |
5.7 nC |
QG Typ @ |VGS| = 10V (nC) |
12 nC |
CISS Typ (pF) |
389 pF |
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