Diodes Incorporated
TSOT26

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DMN2029UVT

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low Input Capacitance
  • Low On-Resistance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 10 ±V
|IDS| @TA = +25°C (A) 6.8 A
PD @TA = +25°C (W) 1.7 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 24 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 32 mΩ
|VGS(TH)| Min (V) 0.4 V
|VGS(TH)| Max (V) 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 7.1 nC
CISS Typ (pF) 646 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs