Diodes Incorporated
SO 8

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N-Channel Mosfet

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This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to backlight, motor control and other power management functions.


  • Backlightring
  • Motor Control
  • DC-DC Conversion
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 12 ±V
    |IDS| @TA = +25°C (A) 7.3 A
    PD @TA = +25°C (W) 1.56 W
    RDS(ON)Max@ VGS(4.5V)(mΩ) 20 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 28 mΩ
    |VGS(TH)| Min (V) 0.6 V
    |VGS(TH)| Max (V) 1.3 V
    QG Typ @ |VGS| = 4.5V (nC) 11.6 nC
    QG Typ @ |VGS| = 10V (nC) 28.5 nC
    CISS Typ (pF) 1000 pF

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