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DMN2028USS

N-Channel Mosfet

Datasheet

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Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to backlight, motor control and other power management functions.

Application(s)

Backlightring

Motor Control

DC-DC Conversion

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	7.3 A
P_D @T_A = +25°C (W)	1.56 W
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	20 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	28 mΩ
\|V_GS(TH)\| Min (V)	0.6 V
\|V_GS(TH)\| Max (V)	1.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	11.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	28.5 nC
C_ISS Typ (pF)	1000 pF

Technical Documents

SPICE Model

DMN2028USS .spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile