Diodes Incorporated
SOT23

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DMN2024U

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which make it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low-Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • Backlighting
  • Power-Management Functions
  • DC-DC Converters
  • Motor Control

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 10 ±V
|IDS| @TA = +25°C (A) 6.8
PD @TA = +25°C (W) 1.4
RDS(ON)Max@ VGS(4.5V)(mΩ) 25 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 29 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 36 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 0.9 V
QG Typ @ |VGS| = 4.5V (nC) 7.1 nC
CISS Typ (pF) 647 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products