Diodes Incorporated
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N-Channel Mosfet

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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • Power management functions
  • Battery Pack
  • Load Switch
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N+N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 8 ±V
    |IDS| @TA = +25°C (A) 5.2 A
    PD @TA = +25°C (W) 0.77 W
    RDS(ON)Max@ VGS(4.5V)(mΩ) 18 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 22 mΩ
    RDS(ON)Max@ VGS(1.8V)(mΩ) 30 mΩ
    |VGS(TH)| Min (V) 0.4 V
    |VGS(TH)| Max (V) 1.1 V
    QG Typ @ |VGS| = 4.5V (nC) 16 nC
    QG Typ @ |VGS| = 10V (nC) 37 nC
    CISS Typ (pF) 1472 pF

    Related Content


    Technical Documents

    SPICE Model

    Recommended Soldering Techniques


    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2402 2019-05-15 2019-08-15 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site and Conversion to Palladium Coated Copper Bond Wire with New Lead Frame Type on Select Products