Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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DMN2015UFDE

N-Channel MOSFET

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Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP)

    Standard

    AEC Qualified

    Yes

    Polarity

    N

    ESD Diodes (Y|N)

    Yes

    |VDS| (V)

    20 V

    |VGS| (±V)

    12 ±V

    |IDS| @TA = +25°C (A)

    10.5 A

    PD @TA = +25°C (W)

    2.03 W

    RDS(ON)Max@ VGS(4.5V)  (mΩ)

    11.6 mΩ

    RDS(ON)Max@ VGS(2.5V)  (mΩ)

    15 mΩ

    RDS(ON)Max@ VGS(1.8V)  (mΩ)

    30 mΩ

    |VGS(TH)| Min (V)

    0.5 V

    |VGS(TH)| Max (V)

    1.1 V

    QG Typ @ |VGS| = 4.5V (nC)

    19.7 nC

    QG Typ @ |VGS| = 10V (nC)

    45.6 nC

    CISS Typ (pF)

    1779 pF

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availability

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    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
    PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products