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DMN2013UFDEWQ

20V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

0.6mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
ESD Protected Gate
Additional Tin-Plated on Sidewall Pads for Optical Solder Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)

Application(s)

General Purpose Interfacing Switch
Power Management Functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	10.5 A
\|I_DS\| @T_C = +25°C (A)	- A
P_D @T_A = +25°C (W)	2.3 W
P_D @T_C = +25°C (W)	- W
R_DS(ON)Max@ V_GS(10V) (mΩ)	- mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	11 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	13 mΩ
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	30 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1.1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	28.7 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	52.6 (@8V) nC
C_ISS Typ (pF)	2508 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products