Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type E)
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type E)
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type E)
N-Channel MOSFET
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This new generation 20V N Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
N |
ESD Diodes (Y|N) |
Yes |
|VDS| (V) |
20 V |
|VGS| (±V) |
8 ±V |
|IDS| @TA = +25°C (A) |
10.5 A |
PD @TA = +25°C (W) |
2.03 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
11 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
13 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
30 mΩ |
|VGS(TH)| Min (V) |
0.5 V |
|VGS(TH)| Max (V) |
1.1 V |
QG Typ @ |VGS| = 4.5V (nC) |
14.3 nC |
QG Typ @ |VGS| = 10V (nC) |
25.8 (@8V) nC |
CISS Typ (pF) |
2453 pF |
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