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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application

  • General Purpose Interfacing Switch
  • Power Management Functions

Product Specifications

Product Parameters

Qualified to AECQ10x Yes
Automotive Compliant PPAP On Request*
Polarity N+N
ESD Diodes Yes
VDS 20 V
VGS 12 ±V
IDS @ TA = +25°C 12.2 A
PD @ TA = +25°C 2.1 W
RDS(ON) Max @ VGS (10V) N/A mΩ
RDS(ON) Max @ VGS (4.5V) 9.5 mΩ
RDS(ON) Max @ VGS (2.5V) 13 mΩ
RDS(ON) Max @ VGS (1.8V) N/A mΩ
VGS (th) Max 1 V
QG Typ @ VGS = 4.5V (nC) 24 nC
QG Typ @ VGS = 10V (nC) 56 nC

Related Content

Packages
V-DFN2050-4

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Authorized Distributor Quantity Inventory Date Buy Online Region
DMN2011UFX-7 Digi-Key Electronics 11469 8/11/2020 Buy Now United States
DMN2011UFX-7 Mouser Electronics Inc. 8950 8/11/2020 Buy Now United States
DMN2011UFX-7 Future Electronics - Asia 1527000 8/10/2020 Singapore