DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive supports PPAP) | Standard |
|---|---|
| CISS Condition @|VDS| (V) | 24 |
| CISS Typ (pF) | 2655 |
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| ESD Diodes (Y|N) | Yes |
| |IDS| @TA = +25°C (A) | 11 |
| PD @TA = +25°C (W) | 1.6 |
| Polarity | N+N |
| QG Typ @ |VGS| = 4.5V (nC) | 33.2 |
| AEC Qualified | No |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 10.5 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 7 |
| |VDS| (V) | 24 |
| |VGS| (±V) | 8 |
| |VGS(TH)| Max (V) | 1.5 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2502 | 2021-03-15 | 2021-09-15 | Device End of Life (EOL) |
