DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) |
24 |
|---|---|
CISS Typ (pF) |
2655 |
ESD Diodes (Y|N) |
Yes |
Polarity |
N+N |
QG Typ @ |VGS| = 4.5V (nC) |
33.2 |
AEC Qualified |
No |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
10.5 |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
7 |
|VDS| (V) |
24 |
|VGS| (±V) |
8 |
|VGS(TH)| Max (V) |
1.5 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2502 | 2021-03-15 | 2021-09-15 | Device End of Life (EOL) |
