N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Polarity | N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 20 V |
| |VGS| (±V) | 8 ±V |
| |IDS| @TA = +25°C (A) | 0.54 A |
| PD @TA = +25°C (W) | 0.2 W |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 550 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 700 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 900 mΩ |
| |VGS(TH)| Min (V) | 0.5 V |
| |VGS(TH)| Max (V) | 1 V |
| CISS Condition @|VDS| (V) | 16 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2485 | 2020-12-04 | 2021-03-04 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products |
