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DMN2004WK

N-Channel MOSFET

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Feature(s)

  • Low On-Resistance: RDS(ON)
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected up to 2kV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (DMN2004WKQ)

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

Yes

|VDS| (V)

20 V

|VGS| (±V)

8 ±V

|IDS| @TA = +25°C (A)

0.54 A

PD @TA = +25°C (W)

0.2 W

RDS(ON)Max@ VGS(4.5V)  (mΩ)

550 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

700 mΩ

RDS(ON)Max@ VGS(1.8V)  (mΩ)

900 mΩ

|VGS(TH)| Min (V)

0.5 V

|VGS(TH)| Max (V)

1 V

CISS Typ (pF)

87 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products