Diodes Incorporated
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DMN15H310SE

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Fast Switching Speed
  • Low Threshold
  • Low Gate Drive
  • Low Input Capacitance

Application(s)

  • Power Management function  
  • DC to DC convertor 

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 150 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 2 A
|IDS| @TC = +25°C (A) 7.1 A
PD @TA = +25°C (W) 1.9 W
RDS(ON)Max@ VGS(10V)(mΩ) 310 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 330 (@5V) mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 4.6 (@5V) nC
QG Typ @ |VGS| = 10V (nC) 8.7 nC
CISS Typ (pF) 405 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products

FAQs

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