DMN15H310SE

N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Input Capacitance

Application(s)

Power Management function
DC to DC convertor

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	150 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	2 A
\|I_DS\| @T_C = +25°C (A)	7.1 A
P_D @T_A = +25°C (W)	1.9 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	310 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	330 (@5V) mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	4.6 (@5V) nC
Q_G Typ @ \|V_GS\| = 10V (nC)	8.7 nC
C_ISS Typ (pF)	405 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN15H310SE.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products