Diodes Incorporated
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DMN14M8UFDF

12V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • 0.6mm Profile – Ideal for Low-Profile Applications
  • PCB Footprint of 4mm2  Low Gate Threshold Voltage
  • Low On-Resistance
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 14.7 A
PD @TA = +25°C (W) 1.9 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 6 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 9 mΩ
|VGS(TH)| Max (V) 1.2 V
QG Typ @ |VGS| = 4.5V (nC) 14.6 nC
QG Typ @ |VGS| = 10V (nC) 29.5 nC
CISS Typ (pF) 1246 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf