Diodes Incorporated
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DMN12M8UCA10

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • CSP with Footprint 2.98mm × 1.49mm
  • Height = 0.11mm for Low Profile
  • ESD Protection of Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 25 A
PD @TA = +25°C (W) 2.75 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 2.8 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 6.2 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.4 V
QG Typ @ |VGS| = 4.5V (nC) 4(@4V) nC
CISS Typ (pF) 2504 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2647 2023-10-12 2024-01-12 Back Metal Composition Change for Select Discrete Products