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DMN1250UFEL

N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation Mix-MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low Gate Charge
R_DS(ON): 350mΩ @ VGS = 4.5V(Single MOSFET)
8 N-Channel MOSFET in 1 Device
Common Source
Small Footprint 1.5mm × 1.5mm

Application(s)

Loadswitch
Smartphones

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	8N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	12 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	2 A
P_D @T_A = +25°C (W)	1.25 W
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	450 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	550 mΩ
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	1.3 nC
C_ISS Typ (pF)	146 pF
C_ISS Condition @\|V_DS\| (V)	6 V

Technical Documents

SPICE Model

DMN1250UFEL.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products