Diodes Incorporated
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DMN1250UFEL

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation Mix-MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low Gate Charge
  • RDS(ON): 350mΩ @ VGS = 4.5V(Single MOSFET)
  • 8 N-Channel MOSFET in 1 Device
  • Common Source
  • Small Footprint 1.5mm × 1.5mm

Application(s)

  • Loadswitch
  • Smartphones

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity 8N
ESD Diodes (Y|N) No
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 2 A
PD @TA = +25°C (W) 1.25 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 450 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 550 mΩ
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 1.3 nC
CISS Typ (pF) 146 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2425 2019-10-04 2020-01-04 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and
Additional Wafer Source for Select Products.
PCN-2402 2019-05-15 2019-08-15 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site and Conversion to Palladium Coated Copper Bond Wire with New Lead Frame Type on Select Products

FAQs

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