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DMN11M2UCA14 (Not Recommended for new design)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RSS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • CSP with Footprint 3.00mm ×2.74mm
  • Height = 0.275mm (Typical) for Low Profile
  • ESD Protection of Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Condition @|VDS| (V) 6
CISS Typ (pF) 6083
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 34
PD @TA = +25°C (W) 3.3
Polarity N+N
QG Typ @ |VGS| = 4.5V (nC) 71
AEC Qualified No
RDS(ON)Max@ VGS(2.5V)(mΩ) 3.4
RDS(ON)Max@ VGS(4.5V)(mΩ) 1.85
|VDS| (V) 12
|VGS| (±V) 8
|VGS(TH)| Max (V) 1.4
|VGS(TH)| Min (V) 0.35

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf