DMN1150UFL3

Dual N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Footprint of Just 1.3 mm²
Ultra-Low Profile Package - 0.35mm Profile
Low Gate Threshold Voltage
Fast Switching Speed
Ultra-Small Surface Mount Package
ESD Protected Gate

Application(s)

Motor Control
Power Management Functions
Backlighting

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	Yes
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	12 V
\|V_GS\| (±V)	6 ±V
\|I_DS\| @T_A = +25°C (A)	2 A
P_D @T_A = +25°C (W)	0.9 W
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	150 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	185 mΩ
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	210 mΩ
\|V_GS(TH)\| Min (V)	0.35 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	1.4 nC
C_ISS Typ (pF)	115 pF
C_ISS Condition @\|V_DS\| (V)	6 V

Technical Documents

SPICE Model

DMN1150UFL3.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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