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DMN10H700S

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Battery Operated Systems and Solid-State Relays
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Feature(s)

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • Qualified to AEC-Q101 Standards for High Reliability

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
VDS (V) 100 V
VGS (±V) 20 ±V
IDS @TA = +25°C (A) 0.7 A
PD @TA = +25°C (W) 0.4 W
RDS(ON)Max @ VGS(10V)(mΩ) 700 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 900 (@6V) mΩ
VGS (th) Max (V) 4 V
QG Typ@ VGS = 10V(nC) 4.6 nC

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMN10H700S-13

DMN10H700S-13

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Mouser Electronics Inc. 112 9/19/2021 South America, North America, Asia, Europe, Middle East Buy Now
Request Sample

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products

FAQs

Related Application FAQs