Diodes Incorporated
TO252 DPAK

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DMN10H170SK3

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 100V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and Motherboard / Servers application

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Analog Switch
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 100 V
    |VGS| (±V) 20 ±V
    |IDS| @TC = +25°C (A) 12
    PD @TA = +25°C (W) 2.84
    PD @TC = +25°C (W) 42
    RDS(ON)Max@ VGS(10V)(mΩ) 140 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 160 mΩ
    |VGS(TH)| Max (V) 3 V
    QG Typ @ |VGS| = 4.5V (nC) 4.9 nC
    QG Typ @ |VGS| = 10V (nC) 9.7 nC
    CISS Typ (pF) 1167 pF
    CISS Condition @|VDS| (V) 25 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products