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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application

  •  Power Management Functions
  •  DC-DC Converters

Product Specifications

Product Parameters

Qualified to AECQ10x Yes
Automotive Compliant PPAP On Request*
Polarity N
ESD Diodes No
VDS 100 V
VGS 20 ±V
IDS @ TA = +25°C 3.8 A
PD @ TA = +25°C 2.4 W
RDS(ON) Max @ VGS (10V) 110 mΩ
RDS(ON) Max @ VGS (4.5V) 122 (@6V) mΩ
RDS(ON) Max @ VGS (2.5V) N/A mΩ
RDS(ON) Max @ VGS (1.8V) N/A mΩ
VGS (th) Max 3 V
QG Typ @ VGS = 4.5V (nC) 5.2 nC
QG Typ @ VGS = 10V (nC) 10.6 nC

Related Content

Packages
PowerDI3333-8

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Authorized Distributor Quantity Inventory Date Buy Online Region
DMN10H120SFG-13 Arrow Electronics Central EU 3000 8/8/2020 Buy Now Germany
DMN10H120SFG-13 Mouser Electronics Inc. 9168 8/8/2020 Buy Now United States
DMN10H120SFG-13 RS Components 11660 8/7/2020 Buy Now England
DMN10H120SFG-13 RS Components Ltd. 11660 8/7/2020 Buy Now Japan
DMN10H120SFG-7 Digi-Key Electronics 16654 8/8/2020 Buy Now United States
DMN10H120SFG-7 Mouser Electronics Inc. 4310 8/8/2020 Buy Now United States

PCNs

Product Change Notices

PCN # Issue Date Subject
PCN-2456 2020-05-29 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site Using Copper or Palladium Coated Copper Bond Wire with Standardization of Assembly Bill of Materials, Or as an Additional Wafer Plating, Back Grinding and Back Metal Process Source, and Qualification of Additional Wafer Source for Select Discrete Products.