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DMN10H100SK3

100V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET features low on-resistance and fast

switching, making it ideal for high efficiency power management

applications.

Feature(s)

Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher density end products
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

Power Management Functions
DC-DC Converters

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	18 A
P_D @T_A = +25°C (W)	2.7 W
P_D @T_C = +25°C (W)	37 W
R_DS(ON)Max@ V_GS(10V) (mΩ)	80 mΩ
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	100 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	12.2 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	25.2 nC
C_ISS Typ (pF)	1172 pF
C_ISS Condition @\|V_DS\| (V)	50 V

Technical Documents

SPICE Model

DMN10H100SK3.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products