DMN1057UCA3

N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low Q_g & Q_gd
Small Footprint
Low Profile 0.26mm Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Battery management
Load switches
Battery protections

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	12 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	4.6 A
P_D @T_A = +25°C (W)	1.81 W
R_DS(ON)Max@ V_GS(4.5V) (mΩ)	57 mΩ
R_DS(ON)Max@ V_GS(2.5V) (mΩ)	69 mΩ
R_DS(ON)Max@ V_GS(1.8V) (mΩ)	102 mΩ
\|V_GS(TH)\| Min (V)	0.55 V
\|V_GS(TH)\| Max (V)	1.3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	1.47 nC
C_ISS Typ (pF)	178 pF
C_ISS Condition @\|V_DS\| (V)	6 V

Technical Documents

SPICE Model

DMN1057UCA3.spice.txt

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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