N-Channel Enhancement Mode MOSFET
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This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.
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Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
No |
Polarity |
N |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
12 V |
|VGS| (±V) |
8 ±V |
|IDS| @TA = +25°C (A) |
5 A |
PD @TA = +25°C (W) |
1.01 W |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
28 mΩ |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
32 mΩ |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
42 mΩ |
|VGS(TH)| Min (V) |
0.4 V |
|VGS(TH)| Max (V) |
1.2 V |
QG Typ @ |VGS| = 4.5V (nC) |
3.2 nC |
CISS Typ (pF) |
325 pF |
CISS Condition @|VDS| (V) |
6 V |
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