Diodes Incorporated
U WLB1010 4

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DMN1032UCB4 (Obsolete)

N-Channel Mosfet

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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Typ (pF) 325
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 4.8
PD @TA = +25°C (W) 1.16
Polarity N
QG Typ @ |VGS| = 4.5V (nC) 3.2
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 38
RDS(ON)Max@ VGS(2.5V)(mΩ) 29
RDS(ON)Max@ VGS(4.5V)(mΩ) 26
|VDS| (V) 12
|VGS| (±V) 8
|VGS(TH)| Max (V) 1.2
|VGS(TH)| Min (V) 0.4

Related Content


Technical Documents


Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2556 2021-11-22 2022-05-22 Device End of Life (EOL)
PCN-2507 2021-02-03 2021-05-03 Qualification of Additional Wafer Backside Material Supplier