Diodes Incorporated
SC59

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DMN1019USNQ

12V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP

Feature(s)

  • Low On-Resistance
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device
  • The DMN1019USNQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF 16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Load Switch
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 9.3
PD @TA = +25°C (W) 1.2
RDS(ON)Max@ VGS(4.5V)(mΩ) 10 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 12 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 14 mΩ
|VGS(TH)| Min (V) 0.35 V
|VGS(TH)| Max (V) 0.8 V
QG Typ @ |VGS| = 4.5V (nC) 27.3 nC
QG Typ @ |VGS| = 10V (nC) 50.6 (@8V) nC
CISS Typ (pF) 2480 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf