Diodes Incorporated

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N-Channel Mosfet

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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • Load Switch
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 9.3
PD @TA = +25°C (W) 1.2
RDS(ON)Max@ VGS(4.5V)(mΩ) 10 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 12 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 14 mΩ
|VGS(TH)| Min (V) 0.35 V
|VGS(TH)| Max (V) 0.8 V
QG Typ @ |VGS| = 4.5V (nC) 27.3 nC
QG Typ @ |VGS| = 10V (nC) 50.6 (@8V) nC
CISS Typ (pF) 2480 pF

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Technical Documents


Recommended Soldering Techniques


Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2439 2019-12-05 2020-03-05 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold
Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products