Diodes Incorporated
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DMN1016UCB6 (Obsolete)

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications

Feature(s)

  • Low Qg & Qgd
  • Small Footprint
  • Low Profile 0.62mm height

Application(s)

  • Battery Management
  • Load Switch
  • Battery Protection

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Standard
CISS Typ (pF) 423
Compliance (Only Automotive(Q) supports PPAP) Standard
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 6.6
PD @TA = +25°C (W) 1.47
Polarity N
QG Typ @ |VGS| = 4.5V (nC) 4.2
AEC Qualified No
RDS(ON)Max@ VGS(2.5V)(mΩ) 23
RDS(ON)Max@ VGS(4.5V)(mΩ) 20
|VDS| (V) 12
|VGS| (±V) 8
|VGS(TH)| Max (V) 1

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2556 2021-11-22 2022-05-22 Device End of Life (EOL)

FAQs

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