Diodes Incorporated

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Dual PNP, 150V, 0.2A, SOT26

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  • BVCEO > -150V
  • IC = -200mA High Collector Current
  • Pair of PNP Transistors That Are Intrinsically Matched (Note 1)
  • 2% Matched Tolerance, hFE, VCE(sat), VBE(sat)
  • Ideal for Medium Power Amplification and Switching
  • Fully Internally Isolated in a Small Surface-Mount Package
  • Epitaxial Planar Die Construction
  • Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3)
  • Halogen and Antimony Free. “Green” Device (Note 4)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Category High Voltage Transistor (Matched hFE, VCE(sat) & VBE(sat))
Compliance(Only Automotive supports PPAP) Standard
Polarity PNP + PNP
VCEO, VCES (V) 150
IC (A) 0.2
PD (W) 0.3
hFE (Min) 60
hFE (@ IC) (A) 0.01
hFE(Min 2) 50
hFE (@ IC2) (A) 0.05
VCE(sat) Max (mV) 200
VCE(SAT) (@ IC/IB) (A/mA) 0.01/1
VCE(sat) (Max.2) (mV) 500
VCE(sat) (@ IC/IB2) (A/mA) 0.05/5
fT (MHz) 100

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Technical Documents


Recommended Soldering Techniques



Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site