DMJ70H600SH3 (Not Recommended for new design)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

Low Input Capacitance
High BV_DSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

Motor Control
Backlighting
DC-DC Converters
Power Management Functions

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	Standard
C_ISS Condition @\|V_DS\| (V)	25
C_ISS Typ (pF)	643
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	No
\|I_DS\| @T_C = +25°C (A)	11
P_D @T_A = +25°C (W)	2.19
P_D @T_C = +25°C (W)	113
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	18.2
AEC Qualified	No
R_DS(ON)Max@ V_GS(10V)(mΩ)	600
\|V_DS\| (V)	700
\|V_GS\| (±V)	30
\|V_GS(TH)\| Max (V)	4

Technical Documents

SPICE Model

DMJ70H600SH3.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2593	2022-11-02	2023-05-02	Device End of Life (EOL)