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DMJ70H1D3SK3 (Not Recommended for new design)

NRND = Not Recommended for New Design

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
The DMP3160LQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
https://www.diodes.com/quality/product-definitions/

Application(s)

Adaptors
LCD & PDP TVs
Lighting

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	Standard
C_ISS Condition @\|V_DS\| (V)	100
C_ISS Typ (pF)	264
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	No
\|I_DS\| @T_C = +25°C (A)	4.7
P_D @T_C = +25°C (W)	57
Polarity	N
Q_G Typ @ \|V_GS\| = 10V (nC)	9.8
AEC Qualified	No
R_DS(ON)Max@ V_GS(10V)(mΩ)	1400
\|V_DS\| (V)	700
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	5

Technical Documents

SPICE Model

DMJ70H1D3SK3.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2607	2023-02-22	2023-08-22	Device End of Life (EOL)