N-CHANNEL ENHANCEMENT MODE HV MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) |
50 |
|---|---|
CISS Typ (pF) |
351 |
ESD Diodes (Y|N) |
No |
Polarity |
N |
QG Typ @ |VGS| = 10V (nC) |
13.9 |
QG Typ @ |VGS| = 4.5V (nC) |
N/A |
AEC Qualified |
No |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
N/A |
RDS(ON)Max@ VGS(10V) (mΩ) |
1300 |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
N/A |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
N/A |
|VDS| (V) |
700 |
|VGS| (±V) |
30 |
|VGS(TH)| Max (V) |
4 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2475 | 2020-08-06 | 2020-11-06 | Qualification of Assembly & Test Site Transfer for Select Discrete Products |
